DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：412.14 Kbytes 页数：14 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件：337.77 Kbytes 页数：10 Pages

TI

德州仪器

Dual j-k Flip-Flop with Set and Reset

文件：228.31 Kbytes 页数：8 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件：349.71 Kbytes 页数：11 Pages

TI

德州仪器

丝印：CD74ACT109E；Package：PDIP；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：412.14 Kbytes 页数：14 Pages

TI

德州仪器

丝印：CD74ACT109E；Package：PDIP；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：412.14 Kbytes 页数：14 Pages

TI

德州仪器

具有设置和复位端的双路正边沿触发式 J-K 触发器

The ’ACT109 devices contain two independent J-K\\ positive-edge-triggered flip-flops. A low level at the preset (PRE)\\ or clear (CLR)\\ inputs sets or resets the outputs, regardless of the levels of the other inputs. When PRE\\ and CLR\\ are inactive (high), data at the J and K\\ inputs meeting the • Inputs Are TTL-Voltage Compatible\n• Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption\n• Balanced Propagation Delays\n• ±24-mA Output Drive Current \n• Fanout to 15 F Devices\n \n• SCR-Latchup-Resistant CMOS Process and Circuit Design\n• Exceeds 2-kV ESD Protection Per M;

TI

德州仪器

丝印：ACT109M；Package：SOIC；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：412.14 Kbytes 页数：14 Pages

TI

德州仪器

丝印：ACT109M；Package：SOIC；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：412.14 Kbytes 页数：14 Pages

TI

德州仪器

丝印：ACT109M；Package：SOIC；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：412.14 Kbytes 页数：14 Pages

TI

德州仪器