CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

Quad 2-Input NAND Gate

文件：29.61 Kbytes 页数：5 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATES

文件：301.52 Kbytes 页数：9 Pages

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德州仪器

丝印：CD74ACT00E；Package：PDIP；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

丝印：CD74ACT00E；Package：PDIP(N)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：CD74ACT00E；Package：PDIP(N)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：CD74ACT00E；Package：PDIP；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

具有 TTL 兼容型 CMOS 输入的 4 通道、2 输入、4.5V 至 5.5V 与非门

The ’ACT00 devices contain four independent 2-input NAND gates. Each gate performs the Boolean function of Y = (A • B)\\ or Y = A\\ + B\\ in positive logic. • Inputs Are TTL-Voltage Compatible\n• Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption\n• Balanced Propagation Delays\n• ±24-mA Output Drive Current \n• Fanout to 15 F Devices\n \n• SCR-Latchup-Resistant CMOS Process and Circuit Design\n• Exceeds 2-kV ESD Protection Per M;

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器