首页 >CD669A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PLASTICPOWERTRANSISTORS | CDIL Continental Device India Limited | CDIL | ||
PLASTICPOWERTRANSISTORS | CDIL Continental Device India Limited | CDIL | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
NPNTypePlasticEncapsulateTransistors FEATURES PowerdissipationPCM:1mW（Tamb=25℃） CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TO-126Plastic-EncapsulateTransistors | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
BIPOLARPOWERGENERALPURPOSETRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconNPNtransistorinaTO-252PlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconNPNtransistorinaSOT-89PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN |
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