首页 >CD4060DR>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

CEB4060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,15A,RDS(ON)=85mΩ@VGS=10V. •SuperhighdensecelldesignforextremelylowRDS(ON) •Highpowerandcurrenthandlingcapability. •TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB4060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=75mΩ@VGS=10V. RDS(ON)=90mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB4060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB4060A

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=75mΩ@VGS=10V. RDS(ON)=90mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=75mW@VGS=10V. RDS(ON)=90mW@VGS=5.0V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

供应商型号品牌批号封装库存备注价格
ADI/亚德诺
21+
原封装
13880
公司只售原装,支持实单
询价
ADI/亚德诺
22+
66900
原封装
询价
ADI/亚德诺
25+
原封装
8800
公司只做原装,详情请咨询
询价
TI
2023+
SOP16
8700
原装现货
询价
TI/德州仪器
23+
SOP16
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
TI
16+
TSSOP-16
8000
原装现货请来电咨询
询价
TI
24+
TSSOP-16
90000
进口原装现货假一罚十价格合理
询价
TI
24+/25+
SOP
10000
原装正品现货库存价优
询价
24+
N/A
76000
一级代理-主营优势-实惠价格-不悔选择
询价
无锡中微
21+
N/A
2500
进口原装,优势现货
询价
更多CD4060DR供应商 更新时间2025-5-16 18:26:00