丝印：CD40107BF；Package：CDIP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CD40107BF；Package：CDIP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CD40107BF3A；Package：CDIP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CD40107BF3A；Package：CDIP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

CMOS Dual 2 Input NAND Buffer/Driver

Description CD40107BMS is a dual 2 input NAND buffer/driver contain ing two independent 2 input NAND buffers with open drain single n-channel transistor outputs. This device features a wired OR capability and high output sink current capability (136mA typ. at VDD = 10V, VDS = 1V). Features

文件：57.44 Kbytes 页数：7 Pages

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