CD4009C数据手册TI中文资料规格书

描述 Description

General Description
These hex buffers are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhance ment mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide supply voltage range. No DC power other than that caused by leakage current is consumed during static conditions. All inputs  are protected against static discharge. These gates may be used as hex buffers, CMOS to DTL or TTL interface or as CMOS current drivers. Conversion ranges are from 3V to 15V providing VCCsVDD.

特性 Features

Wide supply voltage range                                  3.0V to 15V
Low power                                                     100 nW (typ.)
High noise immunity                                       0.45 VDD(typ.)
High current sinking                           8 mA (min.) at VOe0.5V
  capability                                                   and VDDe10VApplications
Automotive
Alarm system
Data terminals
Industrial controls
Instrumentation
Remote metering
Medical electronics
Computers