零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
PrivacyMaskFunction | A1PROSA1 PROs co., Ltd. 韩国A1 PROS电子韩国A1 PROS电子有限公司 | A1PROS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,25A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,20A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,25A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,20A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
OUTDOORLAMPCLUSTER | FORYARDNingbo Foryard Optoelectronics Co., Ltd. 复洋宁波复洋光电有限公司 | FORYARD | ||
1mmAPERTUREOPTO-ELECTRONICSINGLECHANNELSLOTTEDINTERRUPTERSWITCHESWITHTRANSISTORSENSORS DESCRIPTION TheH21A_andH22A_seriesofopaquephotointerruptersaresinglechannelswitchesconsistingofaGalliumArsenideinfraredemittingdiodeandaNPNsiliconphototransistormountedinapolycarbonatehousing.The packageisdesignedtooptimisethemechanicalresolution,couplinge | ISOCOM Isocom Components 2004 LTD | ISOCOM | ||
SLOTTEDOPTICALSWITCH | QT QT Brightek (QTB) | QT | ||
PHOTOTRANSISTOROPTICALINTERRUPTERSWITCH DESCRIPTION TheH21A1,H21A2andH21A3consistofagalliumarsenideinfraredemittingdiodecoupledwithasiliconphototransistorinaplastichousing.Thepackagingsystemisdesignedtooptimizethemechanicalresolution,couplingefficiency,ambientlightrejection,costandreliability.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | ILSI | ||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | ILSI | ||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | ILSI | ||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | ILSI | ||
CrystalFilter3LeadMetalPackage | ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司 | ILSI |
详细参数
- 型号:
CD21A2-GY
- 制造商:
Sealcon USA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HARRIS/哈里斯 |
21+ROHS |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
22+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
询价 | |||
Teledyne Technologies |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
TELEDYNE |
550 |
价格优势!军工IC一级分销商!可开增值税发票! |
询价 | ||||
TELEDYNE |
22+ |
DIP6 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
TELEDYNE |
2022+ |
DIP6 |
57550 |
询价 | |||
TELEDYNE |
23+ |
CDIP |
5177 |
现货 |
询价 | ||
ST |
23+ |
NA |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
22+ |
原厂原封 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 |
相关规格书
更多- CD21AA-BK
- CD21AR-BK
- CD21CDW
- CD21N1-BK
- CD21N5-BK
- CD21N9-MX
- CD21NA-BR
- CD21NP-BK
- CD2200P
- CD22014E WAF
- CD22100BD
- CD22100BF
- CD22100E
- CD22100EX
- CD22100FX
- CD22101BD
- CD22101BF
- CD22101F
- CD22101FX
- CD22102 WAF
- CD22102BE
- CD22102E
- CD22103A
- CD22103AD
- CD22103E
- CD22105AE
- CD22202
- CD22202E
- CD22203E
- CD22204
- CD22204_02
- CD22204M
- CD22212
- CD22212E
- CD22212Q
- CD222N
- CD22301
- CD22301E
- CD22354A
- CD22354AE WAF
- CD22357A
- CD22357AE WAF
- CD223N
- CD22401BE
- CD22402D
相关库存
更多- CD21AA-FE
- CD21AS-03
- CD21CDY
- CD21N3-BK
- CD21N5-MX
- CD21NA-BK
- CD21NA-TE
- CD21NR-BK
- CD22014E
- CD22100
- CD22100BE
- CD22100D
- CD22100ES2468
- CD22100F
- CD22101
- CD22101BE
- CD22101E
- CD22101F3A
- CD22102
- CD22102BD
- CD22102BF
- CD22102FXV
- CD22103A_02
- CD22103AE
- CD22104E
- CD221N
- CD22202_02
- CD22203
- CD22203ES2497
- CD22204 WAF
- CD22204E
- CD22204M96
- CD22212 WAF
- CD22212E1
- CD22223E
- CD222NRB
- CD22301_02
- CD2230IE WAF
- CD22354AE
- CD22354E
- CD22357AE
- CD22357E
- CD22401BD
- CD22401E
- CD22402E