DG722

1.8Vto5.5V,4??DualSPSTSwitches

FEATURES •Halogen-freeaccordingtoIEC61249-2-21 definition •1.8Vto5.5Vsinglepowersupply •Lowandflatswitchonresistance,2.5/typ. •Lowleakageandparasiticcapacitance •366MHz,-3dBbandwidth •Latch-upcurrent>300mA(JESD78) •Spacesavingpackages 2mmx2mm

DRA722

InfotainmentApplicationsProcessor

DRA722

InfotainmentApplicationsProcessorSiliconRevision2.0

FMMT722

SILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat)

FMMT722

SwitchingTransistor

Features ●625mWpowerdissipation. ●ICCONT2.5A. ●ICupto10Apeakpulsecurrent. ●Excellenthfecharacteristicsupto10A(pulsed). ●Extremelylowsaturationvoltagee.g.10mVtyp.. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat).

FMMT722

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-12V •IC=-2.5AContinuousCollectorCurrent •ICM=-10APeakPulseCurrent •LowSaturationVoltageE.g.-17mVMax@IC=-100mA. •RCE(sat)=72mΩat2.5Aforalowequivalenton-resistance •625mWpowerdissipation •hFEcharacterisedupto-10Aforhighcurrentgai

FMMT722

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMMT722TA

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat)

HE722

DualOutputVCO

HEm722

DualOutputVCO