首页 >CCN13N65>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
90mΩ,650VGaNHEMTWithIntegratedDriverandProtection 1.0Features •650VenhancementmodeHEMTwithintegrateddriver •90mΩRDSON •5VPWMinput •UVLOprotection •Zeroreverserecovery •Lowquiescentcurrentdriver •Adjustableturn-onslewrate •Dv/Dtimmunitybothwith/withoutdriver-supply •Lowpropagationdelayforupto2MHzoper | DINTEK Din-Tek Semiconductor | DINTEK | ||
90mΩ,650VGaNHEMTWithIntegratedDriverandProtection 1.0Features •650VenhancementmodeHEMTwithintegrateddriver •90mΩRDSON •5VPWMinput •UVLOprotection •Zeroreverserecovery •Lowquiescentcurrentdriver •Adjustableturn-onslewrate •Dv/Dtimmunitybothwith/withoutdriver-supply •Lowpropagationdelayforupto2MHzoper | DINTEK Din-Tek Semiconductor | DINTEK | ||
SUPERIORIORGaNDTQ13N65GS–90mΩ,650VGaNHEMT 1.0Features •650V,90mΩenhancementmodepowerHEMT •AdapttovariousPWMcontrollers •Zeroreverserecovery •Adjustableturn-onslewrate •Highswitchingfrequency(>2MHz) •Reverseconductioncapable •EnhancedthermalperformancewithNCcenterpad •Simpleandlowcostinterfacec | DINTEK Din-Tek Semiconductor | DINTEK | ||
SUPERIORIORGaNDTQ13N65GS–90mΩ,650VGaNHEMT 1.0Features •650V,90mΩenhancementmodepowerHEMT •AdapttovariousPWMcontrollers •Zeroreverserecovery •Adjustableturn-onslewrate •Highswitchingfrequency(>2MHz) •Reverseconductioncapable •EnhancedthermalperformancewithNCcenterpad •Simpleandlowcostinterfacec | DINTEK Din-Tek Semiconductor | DINTEK | ||
N-ChannelMOSFET FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
