首页 >CC591F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LEDForFlashLightSource LEDForFlashLightSource ●Highoutputtypewithreflectorequipped. | CITIZENCITIZEN ELECTRONICS CO., LTD. 西铁城电子株式会社 | CITIZEN | ||
PNPLowVCE(Sat)1.0Amptransistor DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT591EisaPNPLowVCE(SAT)1.0Amptransistor,epoxymoldedinaspacesavingSOT-563surfacemountpackageanddesignedforapplicationsrequiringahighcurrentcapabilityandlowsaturationvoltages. MARKINGCODE:L59 | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS PNPtransistor | CDIL Continental Device India Limited | CDIL | ||
SOT-23-PowerTransistorandDarlingtons | RECTRON Rectron Semiconductor | RECTRON | ||
PNPEPITAXIALPLANARSILICONTRANSISTOR PNPEPITAXIALPLANARSILICONTRANSISTOR ComplementaryCMMT491A | CDIL Continental Device India Limited | CDIL | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness9.0MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl- | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness7.1MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness5.9MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl | CentralCentral Semiconductor Corp 美国中央半导体 | Central |
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