CBT-QFN-7030资料datasheet下载贸易商华瑞-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
CBT-QFN-7030	文件：274.31 Kbytes Page：4 Pages	Automated probe manufacturing enables low cost and short lead time 文件：274.31 Kbytes 页数：4 Pages	IRONWOOD	IRONWOOD
CEB7030	文件：515.73 Kbytes Page：5 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package. 文件：515.73 Kbytes 页数：5 Pages	CET 华瑞	CET
CEB7030L	文件：515.73 Kbytes Page：5 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package. 文件：515.73 Kbytes 页数：5 Pages	CET 华瑞	CET
CEP7030L	文件：515.73 Kbytes Page：5 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package. 文件：515.73 Kbytes 页数：5 Pages	CET 华瑞	CET

更多CBT-QFN-7030供应商更新时间2025-12-3 16:30:00