Low and stable contact resistance for reliable production yield

文件：407.28 Kbytes 页数：4 Pages

IRONWOOD

SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

文件：909.99 Kbytes 页数：3 Pages

Central

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.3A, RDS(ON) = 6 Ω @VGS = 10V. RDS(ON) = 6 Ω @VGS = 5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92 package.

文件：401.51 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.25A, RDS(ON) = 3 Ω @VGS = 10V. RDS(ON) = 4 Ω @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23-T package.

文件：137.35 Kbytes 页数：4 Pages

CET

华瑞