首页 >CB2302N>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,3.0A,RDS(ON)=72mΩ@VGS=4.5V. RDS(ON)=110mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,4.4A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE20VoltsCURRENT2.8Ampere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION * | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
N-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
N-ChannelEnhancementModeMOSFET | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-Channel20-V(D-S)MOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
SOT-23Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-Channel20-V(D-S)MOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
T-13/4Bi-PinBase(.125) T-13/4Bi-PinBase(.125) | CML Chicago Miniature Lamp,inc | CML |
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