场效应晶体管

CBI

创基电子

N-Channel Enhancement Mode Field Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：498.1 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：371.97 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：497.34 Kbytes 页数：5 Pages

CET

华瑞