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型号：74AHC1G02GV；Package：SC-74A；2-input NOR gate

1.Generaldescription The74AHC1G02;74AHCT1G02isasingle2-inputNORgate.Inputsareovervoltagetolerant.This featureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. 2.Featuresandbenefits •Widesupplyvoltagerangefrom2.0to5.5V •Overvoltagetoler

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型号：74AHCT1G02GW-Q100；Package：TSSOP5；2-input NOR gate

1.Generaldescription The74AHC1G02-Q100;74AHCT1G02-Q100isasingle2-inputNORgate.Inputsareovervoltage tolerant.Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. ThisproducthasbeenqualifiedtotheAutomotiveElectronicsCouncil(AEC)standa

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型号：74AHCT1G02GW-Q100；Package：SC-74A；2-input NOR gate

1.Generaldescription The74AHC1G02-Q100;74AHCT1G02-Q100isasingle2-inputNORgate.Inputsareovervoltage tolerant.Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. ThisproducthasbeenqualifiedtotheAutomotiveElectronicsCouncil(AEC)standa

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型号：74AHCT1G02GW-Q100；Package：TSSOP5；2-input NOR gate

Generaldescription 74AHC1G02-Q100and74AHCT1G02-Q100arehigh-speedSi-gateCMOSdevices.Theyprovidea2-inputNORfunction. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2Vto5.5V. TheAHCTdevicehasTTLinputswitchinglevelsandsupplyvoltagerange4.5Vto

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型号：74AHCT1G04GZ-Q100；Package：XSON5；Inverter

1.Generaldescription The74AHC1G04-Q100;74AHCT1G04-Q100isasingleinverter.Inputsareovervoltagetolerant. Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2Vto5.5V. The

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型号：AP2121AJ4A-1.2TRG1；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features ·LowDropoutVoltageatIOUT=100mA:150mV Typical(Except1.2V,1.3Vand1.5VVersions) ·LowStandbyCurrent:0.1μATypical ·LowQuiescentCurrent:25μATypical ·HighRippleRejection:70dBTypical（f=1kHz） ·OutputCurrent:MoreThan200mA(300mA Limit) ·ExtremelyLowNoise:

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型号：BAS40-06；200mA Surface Mount Small Signal Diodes

■Features •Lowcurrentrectificationandhighspeedswitching. •Smallsurfacemounttype. •Upto200mAcurrentcapability. •Lowforwardvoltagedrop(VF=1.00Vtyp.@40mA). •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-freepart,ex.BAS40G. •Le

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型号：BC53-10PAS；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsolderablesidepads. Featuresandbenefits ■HighcollectorcurrentcapabilityIC

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型号：BC53-10PAS；Package：SOT1061D；80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •ReducedPrinted-CircuitBoard(PCB)arearequirements •Exposedheatsinkforexcellentthermalandelectricalconductivity •Twocurrentgainselections •LeadlessverysmallSMDplasticpackagewithmediumpowercapabili

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型号：BC53-10PAS-Q；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits •Highcollectorcurrentcapa