1200 V, 480 A, Silicon Carbide High-Performance, Switching Optimized, Half-Bridge Module

Technical Features • Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Zero Reverse Recovery from Diodes • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insula

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WOLFSPEED

HM Power Module Family

High Performance 62mm FootprintLow Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced LossesHigh Junction Temperature (175 °C) OperationConfigurations Available with both Second & Third Generation SiC MOSFETsLightweight AlSiC BaseplateSilicon Nitride Insulator f • High Performance 62mm Footprint\n• Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses\n• High Junction Temperature (175 °C) Operation\n• Configurations Available with both Second & Third Generation SiC MOSFETs\n• Lightweight AlSiC Baseplate\n• Silic;

Wolfspeed(CREE)

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LEM/莱姆

上传：天津市博通航睿技术有限公司

传感器

LEM

莱姆

上传：深圳市鹏华威电子有限公司

传感器

LEM/莱姆

上传：天津市博通航睿技术有限公司