CAS480M12HM3中文资料WOLFSPEED数据手册PDF规格书

Technical Features

• Low Inductance, Low Profile 62mm Footprint

• High Junction Temperature (175 °C) Operation

• Implements Switching Optimized Third

Generation SiC MOSFET Technology

• Zero Reverse Recovery from Diodes

• Light Weight AlSiC Baseplate

• High Reliability Silicon Nitride Insulator

VDS 1200 V

IDS 480 A

System Benefits

• Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit

• Increased System Efficiency, due to Low Switching & Conduction Losses of SiC

• High Reliability Material Selection

Applications

• Railway & Traction

• Solar

• EV Chargers

• Industrial Automation & Testing