分立式 MOSFET

1200 V, 1.33 mΩ, HM High Performance 62 mm, Half-Bridge Right GK for Paralleling, Industrial qualified, Silicon Carbide (SiC) Power Module with Pre-Applied Thermal Interface Material (TIM)

Wolfspeed(CREE)

1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

Technical Features • Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator VDS 1200 V IDS 760 A Syste

文件：1.9153 Mbytes 页数：11 Pages

WOLFSPEED

1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

Technical Features • Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator VDS 1200 V IDS 760 A Syste

文件：1.90798 Mbytes 页数：11 Pages

WOLFSPEED

HTSSOP16

TI

德州仪器

上传：深圳市金芯世纪电子有限公司

SOP8

CHIPANAL

上传：深圳市恒科翔业电子有限公司