1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

Technical Features • Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator VDS 1200 V IDS 760 A Syste

文件：1.90798 Mbytes 页数：11 Pages

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HM Power Module Family

High Performance 62mm FootprintLow Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced LossesHigh Junction Temperature (175 °C) OperationConfigurations Available with both Second & Third Generation SiC MOSFETsLightweight AlSiC BaseplateSilicon Nitride Insulator f • High Performance 62mm Footprint\n• Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses\n• High Junction Temperature (175 °C) Operation\n• Configurations Available with both Second & Third Generation SiC MOSFETs\n• Lightweight AlSiC Baseplate\n• Silic;

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分立式 MOSFET

1200 V, 1.33 mΩ, HM High Performance 62 mm, Half-Bridge Right GK for Paralleling, Industrial qualified, Silicon Carbide (SiC) Power Module with Pre-Applied Thermal Interface Material (TIM)

Wolfspeed(CREE)

1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

Technical Features • Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator VDS 1200 V IDS 760 A Syste

文件：1.9153 Mbytes 页数：11 Pages

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