CAB760M12HM3

1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

TechnicalFeatures •LowInductance,LowProfile62mmFootprint •HighJunctionTemperature(175°C)Operation •ImplementsSwitchingOptimizedThird GenerationSiCMOSFETTechnology •LightWeightAlSiCBaseplate •HighReliabilitySiliconNitrideInsulator VDS1200V IDS760A Syste

CAB760M12HM3

HM Power Module Family; • High Performance 62mm Footprint\n• Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses\n• High Junction Temperature (175 °C) Operation\n• Configurations Available with both Second & Third Generation SiC MOSFETs\n• Lightweight AlSiC Baseplate\n• Silicon Nitride Insulator for Robust Thermal Cycling Capability\n;

High Performance 62mm FootprintLow Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced LossesHigh Junction Temperature (175 °C) OperationConfigurations Available with both Second & Third Generation SiC MOSFETsLightweight AlSiC BaseplateSilicon Nitride Insulator for Robust Thermal Cycling Capability

CAB760M12HM3R

1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

TechnicalFeatures •LowInductance,LowProfile62mmFootprint •HighJunctionTemperature(175°C)Operation •ImplementsSwitchingOptimizedThird GenerationSiCMOSFETTechnology •LightWeightAlSiCBaseplate •HighReliabilitySiliconNitrideInsulator VDS1200V IDS760A Syste

CAB760M12HM3R

HM Power Module Family; • High Performance 62mm Footprint\n• Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses\n• High Junction Temperature (175 °C) Operation\n• Configurations Available with both Second & Third Generation SiC MOSFETs\n• Lightweight AlSiC Baseplate\n• Silicon Nitride Insulator for Robust Thermal Cycling Capability\n;

High Performance 62mm FootprintLow Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced LossesHigh Junction Temperature (175 °C) OperationConfigurations Available with both Second & Third Generation SiC MOSFETsLightweight AlSiC BaseplateSilicon Nitride Insulator for Robust Thermal Cycling Capability

CAB7R5A23GM4

2300 V, 7.5 mΩ, Silicon Carbide, Half-Bridge Module

TechnicalFeatures •Ultra-LowLoss •HighFrequencyOperation •ZeroTurn-OffTailCurrentfromMOSFET •Normally-Off,Fail-SafeDeviceOperation •AluminiumNitrideSubstrate •OptionalPre-AppliedThermalInterfaceMaterial TypicalApplications •DCFastChargers •EnergyStorageSys

CAB7R5A23GM4T

栅极驱动板; • Leading silicon carbide MOSFET technology in an industry standard form factor\n• High CTI housing to reduce creepage requirements\n• Built in NTC\n• Press-Fit connections\n• Available with pre-applied thermal interface material\n;

2300 V, 7.5 mΩ, GM package, Half-Bridge (AlN substrate) SiC Power Module with Pre-Applied Thermal Interface Material (TIM)

CAB718

Taoglas Cable Assembly Hirose U.FL to SMA(F)Bulkhead Straight Connector with 200mm 1.13 cable

CAB718

Taoglas Cable Assembly Hirose U.FL to SMA(F)Bulkhead Straight Connector with 200mm 1.13 cable

CAB719

Taoglas Cable Assembly Hirose U.FL to SMA(F)Bulkhead Straight Connector with 100mm 1.13 cable

CAB719

Taoglas Cable Assembly Hirose U.FL to SMA(F)Bulkhead Straight Connector with 100mm 1.13 cable