1200 V, 530 A All-Silicon Carbide Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • Ultra Low Loss, High-Frequency Operation • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator VDS 1200 V IDS 530 A System Benefits • Lightweight, Comp

文件：1.64392 Mbytes 页数：11 Pages

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form FactorStrong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment ApplicationsLow-Inductance Design (10 – 15 nH) for Fast Switching with Low Power LossesMOSFET Die and • Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor\n• Strong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment Applications\n• Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses\n• ;

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Half Bridge SiC MOSFET Module

FEATURES · 175°C maximum junction temperature · Zero Reverse Recovery from Diodes · 62mm half bridge module APPLICATIONS · Motor Drives · Vehicle Fast Chargers · Renewable energy · UPS

文件：444.17 Kbytes 页数：5 Pages

ISC

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1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • Ultra Low Loss , High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator Applications • Inducti

文件：3.35593 Mbytes 页数：12 Pages

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1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62 mm Footprint • Housing CTI ≥ 600 (Material Group I) • Compliant with EN45545-2 R22/23 HL3 • High Humidity Operation THB-80 (HV-H3TRB) • Low Inductance Design Optimized for SiC • Ultra Low Loss, High-Frequency Operation • Normally-off, Fail-safe Devi

文件：3.40523 Mbytes 页数：12 Pages

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