1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low-Inductance (6.7 nH) Design • Implements Wolfspeed’s Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • 1700 V Drain-Source Voltage • Cross-pin Gate-

文件：3.01251 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module

Technica Features • Ultra-Low Loss • High Frequency Operation • Light Weight AlSiC Baseplate • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation Typical Applications • e-Mobility and Motor Drives • EV Chargers • High-Efficiency Converters / Inverters • R

文件：2.27107 Mbytes 页数：12 Pages

WOLFSPEED

SILICON SURGE ABSORBER

文件：242.25 Kbytes 页数：1 Pages

OKAYA

SILICON SURGE ABSORBER

文件：242.25 Kbytes 页数：1 Pages

OKAYA

SILICON SURGE ABSORBER

文件：242.25 Kbytes 页数：1 Pages

OKAYA

Gate Driver Boards

Wolfspeed has developed the XM3 power module platform to maximize the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing • High Temperature (175 °C) Operation\n• Low Inductance (6.7 nH) Design\n• Utilizes Latest 3rd Generation Silicon Carbide MOSFETS\n• Integrated Temperature Sensor and Kelvin-Drain Connection\n• Silicon Nitride Ceramic Substrate and Copper Baseplate;

Wolfspeed(CREE)

分立式 MOSFET

1200 V, 3.5 mΩ, DM, Half-Bridge, Industrial qualified, Silicon Carbide (SiC) Power Module

Wolfspeed(CREE)