1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low-Inductance (6.7 nH) Design • Implements Wolfspeed’s Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • 1700 V Drain-Source Voltage • Cross-pin Gate-

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WOLFSPEED

Gate Driver Boards

Wolfspeed has developed the XM3 power module platform to maximize the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing • High Temperature (175 °C) Operation\n• Low Inductance (6.7 nH) Design\n• Utilizes Latest 3rd Generation Silicon Carbide MOSFETS\n• Integrated Temperature Sensor and Kelvin-Drain Connection\n• Silicon Nitride Ceramic Substrate and Copper Baseplate;

Wolfspeed(CREE)

HTSSOP16

TI

德州仪器

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SOP8

CHIPANAL

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SOIC-16-300mil

Chipanalog(川土微)

上传：深圳市禾兴威科技有限公司