首页 >CA3053AX>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Differential/CascodeAmplifiersforCommercialandIndustrialEquipmentfromDCto120MHz Description TheCA3028AandCA3028Baredifferential/cascodeamplifiersdesignedforuseincommunicationsandindustrialequipmentoperatingatfrequenciesfromDCto120MHz.TheCA3028BisliketheCA3028AbutiscapableofpremiumperformanceparticularlyincriticalDCanddifferentialampl | HARRIS Harris Corporation | HARRIS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-90A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.1mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-87A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.1mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-15A,RDS(ON)=7mΩ@VGS=-10V. RDS(ON)=15mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. ■ESDProtected:4000V | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-16.4A,RDS(ON)=5.8mW@VGS=-10V. RDS(ON)=9.1mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
MOSFET Features -Simpledriverequirement -Lowon-resistance -Fastswitchingspeed | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-90A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.1mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-87A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.1mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-93A,RDS(ON)=5mW@VGS=-10V. RDS(ON)=9mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
600VRandomPhase6-PinPhototriacOptocoupler | CTMICRO CT Micro International Corporation | CTMICRO |
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