丝印：CA189A；Package：SSOP；QUADRUPLE LOW-POWER LINE RECEIVERS

Meet or Exceed the Requirements of TIA/EIA-232-F and ITU Recommendation V.28 Low Supply Current . . . 420 mA Typ Preset On-Chip Input Noise Filter Built-in Input Hysteresis Response and Threshold Control Inputs Push-Pull Outputs Functionally Interchangeable and Pin-to-Pin Compatible With

文件：743.62 Kbytes 页数：24 Pages

TI

德州仪器

丝印：CA189A；Package：SSOP；QUADRUPLE LOW-POWER LINE RECEIVERS

Meet or Exceed the Requirements of TIA/EIA-232-F and ITU Recommendation V.28 Low Supply Current . . . 420 mA Typ Preset On-Chip Input Noise Filter Built-in Input Hysteresis Response and Threshold Control Inputs Push-Pull Outputs Functionally Interchangeable and Pin-to-Pin Compatible With

文件：743.62 Kbytes 页数：24 Pages

TI

德州仪器

丝印：CA189A；Package：SSOP；QUADRUPLE LOW-POWER LINE RECEIVERS

Meet or Exceed the Requirements of TIA/EIA-232-F and ITU Recommendation V.28 Low Supply Current . . . 420 mA Typ Preset On-Chip Input Noise Filter Built-in Input Hysteresis Response and Threshold Control Inputs Push-Pull Outputs Functionally Interchangeable and Pin-to-Pin Compatible With

文件：743.62 Kbytes 页数：24 Pages

TI

德州仪器

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm

文件：43.98 Kbytes 页数：2 Pages

PANASONIC

松下

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm(

文件：44.03 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon Complementary Transistors High Voltage Amplifier & Driver

Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA • High Power Dis

文件：22.53 Kbytes 页数：2 Pages

NTE