型号：CMPZ5226B；Package：SOT-23；350 mW ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial, entertainment and computer applications. Higher voltage devices are available on special order. MARKING CODE: SEE MARKING CODES ON ELECTRICAL CHARACT

文件：100.6 Kbytes 页数：2 Pages

Central

型号：CMPZ5226B；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODE 350mW, 5 TOLERANCE

文件：401.14 Kbytes 页数：2 Pages

Central

型号：CMPZ5226B；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODE

文件：401.14 Kbytes 页数：2 Pages

Central

型号：C8A50Z4A；RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP

型号：C8A50Z4A；RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

文件：362.83 Kbytes 页数：20 Pages

恩XP

型号：C8A50Z4A；1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

恩XP

型号：C8A50Z4；RF Power LDMOS Transistor

文件：364.8 Kbytes 页数：9 Pages

恩XP

型号：C8A50Z4A；Surface Mount Termination 8 Watts, 50廓

文件：103.15 Kbytes 页数：3 Pages

ANARENAnaren Microwave

安伦

型号：C8A50Z4A；RF Power GaN Transistor

文件：379.6 Kbytes 页数：9 Pages

恩XP

型号：C8A50Z4A；RF Power LDMOS Transistor

文件：389.33 Kbytes 页数：16 Pages

恩XP