RF Power LDMOS Transistor

文件：364.8 Kbytes 页数：9 Pages

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1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

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RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

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RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

文件：362.83 Kbytes 页数：20 Pages

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RF Power GaN Transistor

文件：379.6 Kbytes 页数：9 Pages

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RF Power LDMOS Transistor

文件：389.33 Kbytes 页数：16 Pages

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Surface Mount Termination 8 Watts, 50廓

文件：103.15 Kbytes 页数：3 Pages

ANAREN

RF LDMOS Wideband Integrated Power Amplifiers

文件：466.54 Kbytes 页数：13 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：319.31 Kbytes 页数：13 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：470.53 Kbytes 页数：14 Pages

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