MM5Z3V3

Marking：C8；Package：SOD-528；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

MM5Z4V7T5G

Marking：C8；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdisspation:≤40W •Totalpowerdissipation:≤300mW •Toleranceseries:±2 •Wide

PBHV8550X

Marking：C8；Package：SOT89；500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

1.Generaldescription NPNhigh-voltagelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpower SOT89(SC-62)flatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highvoltage •Lowcollector-emittersaturationvoltageVCEsat •Highcollect

PBHV8550X

Marking：C8；Package：SOT89；500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

1.Generaldescription NPNhigh-voltagelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpower SOT89(SC-62)flatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highvoltage •Lowcollector-emittersaturationvoltageVCEsat •Highcollect

PBSS301PD

Marking：C8；Package：SC-74；20 V, 4 A PNP low VCEsat (BISS) transistor

1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301ND. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag

PDTA114EQB

Marking：C8；Package：SOT8015；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTA114EQB-Q

Marking：C8；Package：DFN1110D-3；50 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinanultrasmallDFN1110D-3(SOT8015) leadlessSurface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEDEC NPNcomplement: PDTA14

PESD2V5Y1BSF

Marking：C8；Package：SOD962-2；Extremely low capacitance bidirectional ESD protection diode

1.Generaldescription ExtremelylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiode,partofthe TrEOSprotectionfamily.ThisdeviceishousedinaDSN0603-2(SOD962-2)leadlessultrasmall Surface-MountedDevice(SMD)packagedesignedtoprotectonesignallinefrom

PMEG3010CEH

Marking：C8；Package：SOD123F；1 A very low VF MEGA Schottky barrier rectifiers

Features *Forwardcurrent:IF£1A *Reversevoltage:VR£30V *Verylowforwardvoltage *SmallandflatleadSMDplasticpackages

PMEG3010CEH-Q

Marking：C8；Package：SOD123F；30 V, 1 A very low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin asmallSOD123FSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent::IF≤1A •Reversevoltage:VR≤30V •Verylowforward