650 V Discrete Silicon Carbide Schottky Diodes

Lowest forward voltage (Vf) drop over temperature in the industryZero reverse-recovery charge (Qrr) for ultra-fast switching operationsRobust MPS technology with high surge capabilityHigh reverse-voltage blocking capabilityDirect drop-in replacement for current silicon diodes and other silicon carbi • Lowest forward voltage (Vf) drop over temperature in the industry\n• Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n• Robust MPS technology with high surge capability\n• High reverse-voltage blocking capability\n• Direct drop-in replacement for current silicon diodes and o;

Wolfspeed(CREE)

丝印：C6D16065；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • New 6th Generation Technology • Low Forward Voltage Drop (VF ) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Low Leakage Current (Ir ) • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Effi

文件：671.8 Kbytes 页数：6 Pages

WOLFSPEED

Package：TO-247-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：GEN 6 650V 16 A SBD

WOLFSPEED

E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：638.08 Kbytes 页数：9 Pages

WOLFSPEED

E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：558.13 Kbytes 页数：9 Pages

WOLFSPEED

E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：560.08 Kbytes 页数：9 Pages

WOLFSPEED