650 V Discrete Silicon Carbide Schottky Diodes

650 V, 8 A, QFN package, Industrial qualified, Discrete SiC Schottky Diode • Lowest forward voltage (Vf) drop over temperature in the industry\n• Robust MPS technology with high surge capability\n• Direct drop-in replacement for current silicon diodes and other silicon carbide diodes\n;

Wolfspeed(CREE)

6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：679.48 Kbytes 页数：7 Pages

WOLFSPEED

Package：4-PowerVQFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：8A 650V SIC SCHOTTKY QFN

WOLFSPEED

6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.64579 Mbytes 页数：9 Pages

WOLFSPEED

Silicon Carbide Schottky Diode

文件：728.37 Kbytes 页数：6 Pages

Cree

科锐

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • New 6th Generation Technology • Low Forward Voltage Drop (VF ) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Low Leakage Current (Ir ) • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Effi

文件：642.17 Kbytes 页数：6 Pages

WOLFSPEED