Package：4-PowerVQFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：8A 650V SIC SCHOTTKY QFN

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6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.64579 Mbytes 页数：9 Pages

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Silicon Carbide Schottky Diode

文件：728.37 Kbytes 页数：6 Pages

Cree

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Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • New 6th Generation Technology • Low Forward Voltage Drop (VF ) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Low Leakage Current (Ir ) • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Effi

文件：642.17 Kbytes 页数：6 Pages

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