6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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650 V Discrete Silicon Carbide Schottky Diodes

Lowest forward voltage (Vf) drop over temperature in the industryZero reverse-recovery charge (Qrr) for ultra-fast switching operationsRobust MPS technology with high surge capabilityHigh reverse-voltage blocking capabilityDirect drop-in replacement for current silicon diodes and other silicon carbi • Lowest forward voltage (Vf) drop over temperature in the industry\n• Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n• Robust MPS technology with high surge capability\n• High reverse-voltage blocking capability\n• Direct drop-in replacement for current silicon diodes and o;

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Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：8A 650V SIC SCHOTTKY DIODE

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6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：679.48 Kbytes 页数：7 Pages

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