CDBD640-G

ChipSchottkyBarrierRectifier

CDBD640-HF

SchottkyBarrierRectifiers

Features -Metalsiliconjunction,majorcarrierconduction. -6Atotal(3Aperdiodeleg). -Guardingforovervoltageprotection. -Lowpowerloss,highefficiency. -Excellentpowerdissipationoffersbetterreverse leakagecurrentandthermalresistance. -LowProfilesurfacemountappl

CEBF640

N-ChannelEnhancementModeFieldEffectTransistor

CEBF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CEBF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CEDF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■200V,15A,RDS(ON)=0.15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package. ■Leadfreeproductisacquired.

CEDF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 200V,15A,RDS(ON)=0.15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEFF640

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CEFF640

N-ChannelEnhancementModeFieldEffectTransistor

CEFF640

N-ChannelMOSFETusesadvancedtrenchtechnology