首页 >C6036NLT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Automatedprobemanufacturingenableslowcostandshortleadtime | IRONWOOD Ironwood Electronics. | IRONWOOD | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,135A,RDS(ON)=4.6mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,144A,RDS(ON)=4.0mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=4.0mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,135A,RDS(ON)=4.6mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,144A,RDS(ON)=4.0mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=4.0mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
SIL2Switch/ProximityRelay-OutRepeater FEATURES SIL2/SC3 Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit | GMI G.M. International | GMI | ||
SIL2Switch/ProximityRelay-OutRepeater FEATURES SIL2/SC3 Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit | GMI G.M. International | GMI |
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