首页 >C5750X7S2A106M230KB>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

C5750X7S2A106M230KB

RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

文件:362.83 Kbytes 页数:20 Pages

恩XP

恩XP

C5750X7S2A106M230KB

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件:761.3 Kbytes 页数:18 Pages

恩XP

恩XP

C5750X7S2A106M230KB

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件:388.24 Kbytes 页数:16 Pages

恩XP

恩XP

C5750X7S2A106M230KB

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件:502.63 Kbytes 页数:18 Pages

恩XP

恩XP

C5750X7S2A106M230KB

2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR

Features  Advanced High Performance In- Package Doherty  Greater Negative Gate- Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件:438.23 Kbytes 页数:16 Pages

恩XP

恩XP

C5750X7S2A106M230KB

N-Channel Enhancement-Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件:254.82 Kbytes 页数:8 Pages

恩XP

恩XP

C5750X7S2A106M230KB

Evaluating the AD74115H Single-Channel, Software Configurable Input and Output with HART Modem

GENERAL DESCRIPTION The EVAL-AD74115H-ARDZ is a fully featured evaluation board that can be used to evaluate the features of the AD74115H in a full system solution where power and isolation are provided by the ADP1034. The AD74115H is a single-channel, software configurable, input and output

文件:2.13987 Mbytes 页数:24 Pages

AD

亚德诺

C5750X7S2A106M230KB

Commercial Grade ( Mid Voltage (100 to 630V) )

Features • Voltage rating of 100V to 630V with capacitance range up to 15μF. • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • Low residual inductance assures superior frequency characteristics. • Excellent

文件:138.7 Kbytes 页数:1 Pages

TDK

东电化

C5750X7S2A106M230KB

RF LDMOS Wideband Integrated Power Amplifiers

文件:319.31 Kbytes 页数:13 Pages

恩XP

恩XP

C5750X7S2A106M230KB

RF Power LDMOS Transistor

文件:690.68 Kbytes 页数:8 Pages

恩XP

恩XP

产品属性

  • 产品编号:

    C5750X7S2A106M230KB

  • 制造商:

    TDK Corporation

  • 类别:

    电容器 > 陶瓷电容器

  • 系列:

    C

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 容差:

    ±20%

  • 电压 - 额定:

    100V

  • 温度系数:

    X7S

  • 工作温度:

    -55°C ~ 125°C

  • 应用:

    通用

  • 安装类型:

    表面贴装,MLCC

  • 封装/外壳:

    2220(5750 公制)

  • 大小 / 尺寸:

    0.224" 长 x 0.197" 宽(5.70mm x 5.00mm)

  • 厚度(最大值):

    0.098"(2.50mm)

  • 描述:

    CAP CER 10UF 100V X7S 2220

供应商型号品牌批号封装库存备注价格
TDK
2019+
SMD
120000
原盒原包装 可BOM配套
询价
TDK(东电化)
2021/2022+
标准封装
40000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
TDK(东电化)
24+
2220(5750 公制)
32333
TDK原厂直供,全系列可订货。美金交易,大陆交货。
询价
TDK(东电化)
2511
标准封装
20000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
TDK
24+
SMD2220
125500
专营被动元器件原装现货
询价
TDK
23+
SMD被动器件正迈科技
99050
电容电阻被动器件电感磁珠系列样品可出支持批量
询价
TDK/东电化
24+
NA
13579
原装现货,专业配单专家
询价
TDK/东电化
2447
SMD2220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TDK
25+
电容器
2926
就找我吧!--邀您体验愉快问购元件!
询价
TDK/东电化
21+
NA
38579
只做原装,一定有货,不止网上数量,量多可订货!
询价
更多C5750X7S2A106M230KB供应商 更新时间2025-10-4 13:31:00