Evaluating the AD74115H Single-Channel, Software Configurable Input and Output with HART Modem

GENERAL DESCRIPTION The EVAL-AD74115H-ARDZ is a fully featured evaluation board that can be used to evaluate the features of the AD74115H in a full system solution where power and isolation are provided by the ADP1034. The AD74115H is a single-channel, software configurable, input and output

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AD

亚德诺

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件：761.3 Kbytes 页数：18 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：388.24 Kbytes 页数：16 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 页数：18 Pages

恩XP

2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR

Features  Advanced High Performance In- Package Doherty  Greater Negative Gate- Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：438.23 Kbytes 页数：16 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：254.82 Kbytes 页数：8 Pages

恩XP

RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

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恩XP

Commercial Grade ( Mid Voltage (100 to 630V) )

Features • Voltage rating of 100V to 630V with capacitance range up to 15μF. • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • Low residual inductance assures superior frequency characteristics. • Excellent

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TDK

东电化

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP

MULTILAYER CERAMIC CHIP CAPACITORS

Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency characteristics allow for a circuit de

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TDK

东电化