丝印：C5460B；Package：TO-126N；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • Dynamic Focus • High-Voltage Switching • High-Voltage Amplifiers Features (1) High collector voltage : VCEO = 800 V

文件：154.84 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：C546A；Package：SOT-54；NPN general purpose transistors

文件：60.93 Kbytes 页数：9 Pages

PHI

飞利浦

丝印：C546A；Package：SOT-54；65 V, 100 mA NPN general-purpose transistors

文件：404.87 Kbytes 页数：14 Pages

恩XP

丝印：C546A；Package：SOT-54；65 V, 100 mA NPN general-purpose transistors

文件：404.87 Kbytes 页数：14 Pages

恩XP

丝印：C546A；Package：SOT-54；65 V, 100 mA NPN general-purpose transistors

文件：404.87 Kbytes 页数：14 Pages

恩XP

丝印：C546B；Package：SOT-54；65 V, 100 mA NPN general-purpose transistors

文件：404.87 Kbytes 页数：14 Pages

恩XP

丝印：C546B；Package：SOT-54；NPN general purpose transistors

文件：60.93 Kbytes 页数：9 Pages

PHI

飞利浦

丝印：C546B；Package：SOT-54；65 V, 100 mA NPN general-purpose transistors

文件：404.87 Kbytes 页数：14 Pages

恩XP

丝印：C546B；Package：SOT-54；65 V, 100 mA NPN general-purpose transistors

文件：404.87 Kbytes 页数：14 Pages

恩XP

APD module integrated with peripheral circuits

APD module integrated with peripheral circuits Uses high sensitivity APD\n  Two types of APDs with different active areas (φ1.5 mm, φ3.0 mm) are provided.\nOn-board high sensitivity circuit optimized for APD evaluation\n  An APD and a low-noise current-to-voltage amplifier circuit are mounted on a compact PC board. The current-to-voltage amplifi;

Hamamatsu

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