丝印：C5460B；Package：TO-126N；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • Dynamic Focus • High-Voltage Switching • High-Voltage Amplifiers Features (1) High collector voltage : VCEO = 800 V

文件：154.84 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Feature：Low saturation voltage\nApplication Scope：High voltage switching / High voltage general amplifier\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC 0.05 A \nCollector Current ICP 0.1 A \nCollector power dissipation PC 10 W \nCollector power dissipation PC 1.5 W \nCollector-Base Voltage VCBO 800 V \nCollector-emitter voltage VCEO 800 V ;

Toshiba

东芝

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANSISTOR NPN TO126N

Toshiba Semiconductor and Storage

N- and P-Channel 40V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：594.63 Kbytes 页数：10 Pages

VBSEMI

微碧半导体