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BFG505	文件：159.22 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505	文件：306.4 Kbytes Page：13 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505	文件：136.27 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司	JMNIC
BFG505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505/X	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505/X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505/X	文件：159.22 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505/X	文件：306.4 Kbytes Page：13 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W/X	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W-X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W-XR	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505-X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFM505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFM505	文件：92.89 Kbytes Page：10 Pages	DualNPNwidebandtransistor DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount,6-pinSOT363(S-mini)package.ThetransistorsareprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellularphones,cordlessphones,radardetectors,pagersandsat	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFR505	文件：120.89 Kbytes Page：12 Pages	NPN9GHzwidebandtransistor DESCRIPTION TheBFR505isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFR505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFR505T	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFR505T	文件：103.54 Kbytes Page：16 Pages	NPN9GHzwidebandtransistor DESCRIPTION NPNtransistorinaplasticSOT416(SC-75)package. FEATURES •Lowcurrentconsumption •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability •SOT416(SC-75)package. APPLICATIONS Lowpoweramplifiers,oscillat	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips

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详细参数

型号：
C505C
制造商：
INFINEON
制造商全称：
Infineon Technologies AG
功能描述：
8-Bit Single-Chip Microcontroller

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	C505C	INFINEON	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市安富世纪电子有限公司	C505C	INFINEON	23+		8000	只做原装现货	询价
中科航电(深圳)半导体技术有限公司	C505CA4EMCAKXQMA1	InfineonTechnologies	2019+	P-MQFP-44	65500	原装正品货到付款,价格优势!	询价
深圳市昊创电子有限公司	C505CALMCAFXQMA1	Infineon/英飞凌	19+		68000	原装正品价格优势	询价
深圳市毅创弘电子科技有限公司	C505CALMCAFXQMA1	InfineonTechnologies	23+	44-MQFP(10x10)	66800	进口原装可追溯假一罚十	询价
深圳兆威电子有限公司	C505CALMCAFXQMA1	Infineon	20+	NA	90000	全新原装正品/库存充足	询价
深圳市赛芯源科技有限公司	C505CA4EMCAKXQMA1	Infineon Technologies	20+	P-MQFP-44	600000	原装正品,现货通路商	询价
深圳市斌腾达科技有限公司	C505CA4RMCAKXUMA2	Infineon Technologies	21+	44-TQFP	5680	100%进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市艾宇欣科技有限公司	C505CA4EMCAFXQMA1	Infineon	1931+	N/A	1350	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	C505CA4EMCABXQMA1	INFINEON/英飞凌	2021+	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多C505C供应商更新时间2024-6-6 9:02:00

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