Power GaN transistor

50 W GaN packaged Doherty power transistor for base station applications at frequencies from 2300 MHz to 2690 MHz. • Excellent digital pre-distortion capability\n• High efficiency\n• Designed for broadband operation\n• Lower output capacitance for improved performance in Doherty applications\n• Internally matched for ease of use\n• For RoHS compliance see the product details on the Ampleon website;

Ampleon

安谱隆

Package：6-VDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：C4H2327N55PZ/DFN-7X6.5-6-1/REELD

Ampleon USA Inc.