丝印：C4D08120；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H

文件：904.1 Kbytes 页数：6 Pages

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丝印：C4D08120；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H

文件：904.1 Kbytes 页数：6 Pages

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4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.19708 Mbytes 页数：9 Pages

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Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：617.27 Kbytes 页数：5 Pages

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Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：643.1 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：714.83 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：907.89 Kbytes 页数：6 Pages

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