首页 >C3N60C3D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
6A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev | HARRIS Harris Corporation | HARRIS | ||
6A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev | HARRIS Harris Corporation | HARRIS | ||
6A,600V,UFSSeriesN-ChannelIGBTs TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
6A,600V,UFSSeriesN-ChannelIGBTs TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | Intersil Intersil Corporation | Intersil | ||
6A,600V,UFSSeriesN-ChannelIGBTs TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | Intersil Intersil Corporation | Intersil | ||
6A,600V,UFSSeriesN-ChannelIGBTs TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode | HARRIS Harris Corporation | HARRIS | ||
6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | Intersil Intersil Corporation | Intersil | ||
6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch | HARRIS Harris Corporation | HARRIS |
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