丝印：C3M0120065L；Package：TOLL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical App

文件：898.5 Kbytes 页数：13 Pages

WOLFSPEED

Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical App

文件：898.5 Kbytes 页数：13 Pages

WOLFSPEED

Discrete Silicon Carbide Schottky Diodes

Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high • Low On-State Resistance over Temperature\n• Low Parasitic Capacitances\n• Fast Diode with ultra low reverse recovery\n• High Temperature Operation (TJ = 175°C)\n• Kelvin Source Pin\n• Industry Standard Through-Hole & SMT Packages\n• Small form factor\n• Low lead inductance\n• Low Thermal Impedance;

Wolfspeed(CREE)

SiC MOS

ChipNobo

无边界

650 V Discrete Silicon Carbide MOSFETs

Wolfspeed(CREE)

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：SIC, MOSFET, 120M, 650V, TOLL, I

WOLFSPEED