C3M0120065L中文资料Discrete Silicon Carbide Schottky Diodes数据手册Wolfspeed(CREE)规格书

描述 Description

Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.

特性 Features

• Low On-State Resistance over Temperature
• Low Parasitic Capacitances
• Fast Diode with ultra low reverse recovery
• High Temperature Operation (TJ = 175°C)
• Kelvin Source Pin
• Industry Standard Through-Hole & SMT Packages
• Small form factor
• Low lead inductance
• Low Thermal Impedance

应用 Application

• Industrial Power Supplies
• Server/Telecom
• EV-Charging Systems
• Energy Storage Systems (ESS)
• Uninterruptible Power Supplies (UPS)
• Battery Management Systems (BMS)

简介

C3M0120065L属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的C3M0120065L晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。