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SN74LVC1G38DBVRE4

丝印:C385;Package:SOT-23(DBV);SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

文件:1.97409 Mbytes 页数:37 Pages

TI

德州仪器

SN74LVC1G38DBVRG4

丝印:C385;Package:SOT-23(DBV);SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

文件:1.97409 Mbytes 页数:37 Pages

TI

德州仪器

SN74LVC1G38DBVRG4.B

丝印:C385;Package:SOT-23(DBV);SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

文件:1.97409 Mbytes 页数:37 Pages

TI

德州仪器

SN74LVC1G38DBVTG4

丝印:C385;Package:SOT-23(DBV);SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

文件:1.97409 Mbytes 页数:37 Pages

TI

德州仪器

SN74LVC1G38DBVTG4.B

丝印:C385;Package:SOT-23(DBV);SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

文件:1.97409 Mbytes 页数:37 Pages

TI

德州仪器

SN74LVC1G38DBVR

丝印:C385;Package:SOT-23;Single 2-Input NAND Gate With Open-Drain Output

文件:1.55698 Mbytes 页数:34 Pages

TI

德州仪器

SN74LVC1G38DBVR

丝印:C385;Package:SOT-23;Single 2-Input NAND Gate With Open-Drain Output

文件:2.50818 Mbytes 页数:38 Pages

TI

德州仪器

SN74LVC1G38DBVRE4

丝印:C385;Package:SOT-23;Single 2-Input NAND Gate With Open-Drain Output

文件:2.50818 Mbytes 页数:38 Pages

TI

德州仪器

SN74LVC1G38DBVRE4

丝印:C385;Package:SOT-23;Single 2-Input NAND Gate With Open-Drain Output

文件:1.55698 Mbytes 页数:34 Pages

TI

德州仪器

SN74LVC1G38DBVRG4

丝印:C385;Package:SOT-23;Single 2-Input NAND Gate With Open-Drain Output

文件:2.50818 Mbytes 页数:38 Pages

TI

德州仪器

详细参数

  • 型号:

    C385

  • 功能描述:

    逻辑门 SNGL 2 Input NAND Gate

  • RoHS:

  • 制造商:

    Texas Instruments

  • 产品:

    OR

  • 逻辑系列:

    LVC

  • 栅极数量:

    2

  • 线路数量(输入/输出):

    2/1

  • 高电平输出电流:

    - 16 mA

  • 低电平输出电流:

    16 mA

  • 传播延迟时间:

    3.8 ns

  • 电源电压-最大:

    5.5 V

  • 电源电压-最小:

    1.65 V

  • 最大工作温度:

    + 125 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    DCU-8

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
TEXAS
SOT-23-5
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
TexasInstruments
18+
ICSGL2INNANDGTEW/ODSOT23
6800
公司原装现货/欢迎来电咨询!
询价
TI
25+
SOT23-5
6000
就找我吧!--邀您体验愉快问购元件!
询价
TI
22+
SC74A SOT753
9000
原厂渠道,现货配单
询价
Texas Instruments(德州仪器)
24+
WSON-6
690000
代理渠道/支持实单/只做原装
询价
Texas Instruments
25+
SOT-23-5
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
TI(德州仪器)
2021+
SOT-23-5
499
询价
TI(德州仪器)
24+
SOT235
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
TI(德州仪器)
24+
SOT235
3591
原装现货,免费供样,技术支持,原厂对接
询价
TI
24+
con
10000
查现货到京北通宇商城
询价
更多C385供应商 更新时间2025-12-22 14:01:00