FDI3652

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=61A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo

FDP3652

N-ChannelPowerTrenchMOSFET100V,61A,16m?

Features •rDS(ON)=14mΩ(Typ.),VGS=10V,ID=61A •Qg(tot)=41nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCConvertersandOff-lineUPS •DistributedPowerArchitectures

FDP3652

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=61A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

GPDR3652

RECTIFIERDIODE

RECTIFIERDIODE VOLTAGEUPTO2400V AVERAGECURRENT6520A SURGECURRENT60kA

GPDR3652

RECTIFIERDIODE

HP-3652-B

HANDHELDPLASTICSTYLE2

JHV3652

HIGHVOLTAGERECTIFIERASSEMBLY

KDB3652

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=14mΩ(Typ.),VGS=10V,ID=61A ●Qg(tot)=41nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

LT3652

HighVoltageHighCurrentControllerforBatteryChargingwithMaximumPowerPointControl

LT3652

Monolithic4AHIghVoltage2-CellLi-IonBatteryCharger