F3205Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

FDP3205

N-ChannelPowerTrench짰MOSFET55V,100A,7.5m廓

FDP3205

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FHP3205

FHP3205isalow-voltagehigh-currentpowerMOSfieldeffecttransistor,widelyusedinpowerinverters

Features 110A,55V,RDS(on)=8.0mΩfastswitching speed

FJNS3205R

NPNEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=4.7KΩ,R2=10KΩ) •ComplementtoFJNS4205R

FPIR3205

FASTRECOVERY,32,40and50AMPERES

FRM3205CC

Ultra-fastPOWERplanar??Rectifiers32A,50-200V

FTC3205

ComplementarytoFTA1273

G3205

Dual1SPDTAnalogSwitch

GA3205

FRONTWAVE-TMMulti-MicrophoneHybrid

DESCRIPTION TheGA3205isamulti-memoryhybridthat,withtheadditionoftwomicrophones,canbeusedtoproduceadirectionalresponseinanyhearingaid.Thefouravailablememoriescanbeprogrammedtoincludeanyofthe4modesofoperation:1micomnidirectional,2micomnidirectional,dir