AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：303.57 Kbytes 页数：12 Pages

IRF

N-Channel PowerTrench짰 MOSFET 55V, 100A, 7.5m廓

文件：393.37 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =100A@ TC=25℃ ·Drain Source Voltage : VDSS=55V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：331.46 Kbytes 页数：2 Pages

ISC

无锡固电

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

文件：343.27 Kbytes 页数：8 Pages

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