Large Area Silicon Avalanche Photodiode for General-Purpose Applications

[EG&G CANADA LTD.] Large Area Silicon Avalanche Photodiode for General-Purpose Applications

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Photodiode-Preamplifier Module

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高性能Si APD

埃赛力达C30916EH是一种通用硅雪崩光电二极管，采用双扩散“穿透式”结构制成。这种结构能够在400至1000nm之间提供高响应度，并能在所有波长下实现极快的上升和下降。\n\n功能与优点：\n\n低噪声\n\n高增益\n\n高量子效率\n\n内置热电致冷选项\n\n应用领域：\n\n激光测距\n\nLiDAR\n\n自由空间通信\n\n分光光度计\n\n荧光探测 • 感光面积：1.7 mm²\n• 感光直径：1.5 mm\n• 击穿电压：>315, 390, <490 V\n• 电容：3pF\n• 暗电流：100 nA\n• 增益：80\n• NEP：20 fW/√Hz\n• 封装：TO-5\n• 峰值灵敏度波长：900 nm\n• 响应度：在900 nm处为>50 A/W，在1060 nm处为12 A/W\n• 上升/下降时间：3 ns;

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埃赛力达

DC-40GHz ATTENUATOR

Description The CHT3091a is a variable DC-40GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Features ■ Broadband performances: DC-40GHz

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UMS

DC-40GHz ATTENUATOR

Description The CHT3091a is a variable DC-40GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a MESFET process

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UMS

DC-40GHz ATTENUATOR

文件：669.48 Kbytes 页数：8 Pages

UMS