首页 >C2M1000170DIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiCN-ChannelMOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=1.4Ω（MAX）@VGS=20VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconCarbidePowerMOSFETC2MTMMOSFETTechnologyN-ChannelEnhancementMode Features •HighSpeedSwitchingwithLowCapacitances •HighBlockingVoltagewithLowRDS(on) •EasytoParallelandSimpletoDrive •Ultra-lowDrain-gatecapacitance •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •IncreasedSystemSwitchingFrequency •ReducedCool | WOLFSPEED WOLFSPEED, INC. | WOLFSPEED | ||
SiliconCarbidePowerMOSFETZ-FETTMMOSFET | CreeCree, Inc 科锐 | Cree | ||
SiliconCarbidePowerMOSFET | CreeCree, Inc 科锐 | Cree |
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